The Effect of Grain Boundaries on Schottky Diode Parameters
Baghdad Science Journal
View Archive Info| Field | Value | |
| Title |
The Effect of Grain Boundaries on Schottky Diode Parameters
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| Creator |
Journal, Baghdad Science
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| Description |
The activation energy and optical band gap of different regions (p-type) polysilicon have been measured. Both microscopic studies and current-voltage characteristics of diodes prepared on different surface regions were carried out. Comparison of diodes parameters and microscopic studies indicate that the type of angles between boundaries has a significant effect on diodes parameters while the boundary lengths per unit area has less effect. The mechanism of Al-interaction with grain boundaries and their intersecting points at different temperature were also studies. The X-ray fluorescence spectrometry has been used for detection of diffused A1%.
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| Publisher |
College of Science for Women - University of Baghdad
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| Date |
2004-06-06
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| Type |
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion Peer-reviewed Article |
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| Format |
application/pdf
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| Identifier |
http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/556
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| Source |
مجلة بغداد للعلوم; مجلد 1 عدد 2 (2004): issue 2; 258-263
Baghdad Science Journal; Vol 1 No 2 (2004): issue 2; 258-263 2411-7986 2078-8665 |
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| Language |
eng
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| Relation |
http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/556/487
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| Rights |
Copyright (c) 2004 Baghdad Science Journal
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