Evaluation of Laser Doping of Si from MCLT Measurement
Baghdad Science Journal
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| Title |
Evaluation of Laser Doping of Si from MCLT Measurement
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| Creator |
Journal, Baghdad Science
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| Description |
The measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive to the doping laser energy.
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| Publisher |
College of Science for Women - University of Baghdad
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| Date |
2004-06-06
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| Type |
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion Peer-reviewed Article |
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| Format |
application/pdf
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| Identifier |
http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/567
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| Source |
مجلة بغداد للعلوم; مجلد 1 عدد 2 (2004): issue 2; 321-325
Baghdad Science Journal; Vol 1 No 2 (2004): issue 2; 321-325 2411-7986 2078-8665 |
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| Language |
eng
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| Relation |
http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/567/498
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| Rights |
Copyright (c) 2004 Baghdad Science Journal
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