The effects of raddiation on the optical properties of GERMANIUM SELENIDE semiconductor.
Baghdad Science Journal
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| Title |
The effects of raddiation on the optical properties of GERMANIUM SELENIDE semiconductor.
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| Creator |
Journal, Baghdad Science
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| Description |
Study was made on the optical properties of Ge2oSe8othinfilms prepared by vac-uum evaporation as radiated by (0,34,69) Gy of 13 ray.The optical band gab Eg and tailing band A.Et were studied in the photon energy range ( 1 to 3)eV. The a-Ge20Se8o film was found to be indirect gap with energy gap of (1.965,1.9 , 1.82) eV at radiated by B ray with absorption doses of (0,34,69)Gy respectively.The Ea and AEt of Ge20Se80 films showed adecrease in E8 and an increase in AEt with radiation. This be-havior may be related to structural defects and dangling bonds.
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| Publisher |
College of Science for Women - University of Baghdad
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| Date |
2004-06-06
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| Type |
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion Peer-reviewed Article |
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| Format |
application/pdf
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| Identifier |
http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/568
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| Source |
مجلة بغداد للعلوم; مجلد 1 عدد 2 (2004): issue 2; 326-329
Baghdad Science Journal; Vol 1 No 2 (2004): issue 2; 326-329 2411-7986 2078-8665 |
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| Language |
eng
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| Relation |
http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/568/499
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| Rights |
Copyright (c) 2004 Baghdad Science Journal
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