Influence of Laser Irradiation Times on Properties of Porous Silicon
Baghdad Science Journal
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| Title |
Influence of Laser Irradiation Times on Properties of Porous Silicon
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| Creator |
Journal, Baghdad Science
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| Description |
Porous silicon (P-Si) has been produced in this work by photoelectrochemical (PEC) etching process. The irradiation has been achieved using diode laser of (2 W) power and 810 nm wavelength. The influence of various irradiation times on the properties of P-Si material such as P-Si layer thickness, surface aspect, pore diameter and the thickness of walls between pores as well as porosity and etching rate was investigated by depending on the scanning electron micrograph (SEM) technique and gravimetric measurements.
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| Publisher |
College of Science for Women - University of Baghdad
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| Date |
2007-12-02
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| Type |
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion Peer-reviewed Article |
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| Format |
application/pdf
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| Identifier |
http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/848
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| Source |
مجلة بغداد للعلوم; مجلد 4 عدد 4 (2007): issue 4; 640-646
Baghdad Science Journal; Vol 4 No 4 (2007): issue 4; 640-646 2411-7986 2078-8665 |
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| Language |
eng
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| Relation |
http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/848/779
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| Rights |
Copyright (c) 2007 Baghdad Science Journal
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