'I-V Characteristic and Crystal Structural Of a-As/c-Si Heterojunctions
Baghdad Science Journal
View Archive Info| Field | Value | |
| Title |
'I-V Characteristic and Crystal Structural Of a-As/c-Si Heterojunctions
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| Creator |
Journal, Baghdad Science
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| Description |
In this research the a-As flims have been prepared by thermal evaporation with thickness 250 nm and rata of deposition r_d(1.04nm/sec) as function to annealing temperature (373 and 473K), from XRD analysis we can see that the degree of crystalline increase with T_a, and I-V characteristic for dark and illumination shows that forward bias current varieties approximately exponentially with voltage bias. Also we found that the quality factor and saturation current dependence on annealing temperatures.
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| Publisher |
College of Science for Women - University of Baghdad
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| Date |
2014-06-01
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| Type |
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion Peer-reviewed Article |
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| Format |
application/pdf
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| Identifier |
http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2673
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| Source |
مجلة بغداد للعلوم; مجلد 11 عدد 2 (2014): issue 2 عدد خاص بالمؤتمر النسوي الثاني; 621-624
Baghdad Science Journal; Vol 11 No 2 (2014): issue 2 عدد خاص بالمؤتمر النسوي الثاني; 621-624 2411-7986 2078-8665 |
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| Language |
eng
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| Relation |
http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/2673/2604
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| Rights |
Copyright (c) 2014 Baghdad Science Journal
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